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Title: Properties of V/sub 1-x/Cu/sub x/O/sub 2/ solid solutions (0 less than or equal to x less than or equal to 0. 04)

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6051608

V/sub 1-x/Cu/sub x/O/sub 2/ (0 less than or equal to x less than or equal to 0.04) solid solutions have been made and have been shown to be isostructural with pure vanadium dioxide for x less than or equal to 0.02. There is a semiconductor-metal transition in them, and the copper ions are redistributed for x > 0.02. Copper reduces the semiconductor-metal transition temperature and stabilizes the intermediate insulating phase. Susceptibility and voltammetry indicate that the copper in V/sub 1-x/Cu/sub x/O/sub 2/ indicates that paramagnetic centers are formed by breakage of some of the V/sup 4 +/ - V/sup 4 +/ bonds, with 4V/sup 4 +/ ..-->.. 3V/sup 5 +/ + Cu/sup +/ charge compensation. The number of paramagnetic centers is proportional to the copper concentration for x less than or equal to 0.02.

Research Organization:
Ural Scientific Center (USSR)
OSTI ID:
6051608
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Vol. 23:10; Other Information: Translated from Izv. Akad. Nauk SSSR, Neorg. Mater.; 23, No. 10, 1678-1682 (Oct 1987)
Country of Publication:
United States
Language:
English