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Studies of the initial oxidation of Fe-Si alloys by AES, XPS, EELS, and LEED

Thesis/Dissertation ·
OSTI ID:6049863
Thin oxide layers on polycrystalline Fe-8.75at % Si, and single-crystalline Fe-6.85at% Si (110) and (111) alloys were investigated by AES (including Ar/sup +/ and Xe/sup +/ depth profiling), EELS, XPS, and LEED during the initial oxidation stage at room temperature under very low oxygen pressure. It was observed that a very thin SiO/sub 2/-rich external layer is formed, as predicted by others, and established preferentially at the first stage of oxidation. A Si-depletion zone approx.5 A deep was found in the polycrystalline alloy with about 25% Si-depletion at the alloy/oxide interface. The formation of an Fe silicate-like structure just beneath the Si oxide-rich top layer down to the alloy/oxide interface was also observed. The rates of oxidation of polycrystalline alloys were determined to be retarded to approximately 40% of the rate of pure Fe after exposure to 200 L of O/sub 2/. The best annealing conditions for each single-crystalline alloy were determined to provide the cleanest surface for the following initial oxidation experiments. Annealing at approx. 55/sup 0/C for 20 min after Ar/sup +/ sputter-cleaning was found to be best for Fe-Si (110). The initial oxidation results for the single-crystalline alloys were compared with those of the polycrystal alloys to show a general resemblance in the various initial oxidation features.
Research Organization:
Iowa State Univ. of Science and Technology, Ames (USA)
OSTI ID:
6049863
Country of Publication:
United States
Language:
English