Inelastic scattering at the B K edge of hexagonal BN
- Univ. of Tennessee, Knoxville, TN (United States); and others
Many recent soft x-ray fluorescence (SXF) studies have shown that inelastic scattering processes make important contributions to the observed spectra for excitation near the x-ray threshold. These effects are all attributed to a process, usually called an electronic Raman scattering (ERS) process, in which energy is lost to an electronic excitation. The theory has been described using second order perturbation theory by Tulkki and Aberg. In different materials, the detailed nature of the electronic excitation producing the energy loss may be very different. In crystalline Si, diamond and graphite, changes in spectral shape and dispersion of spectral features with variation of the excitation energy are observed, which are attributed to k conservation between the photoelectron generated in the excitation process and the valence hole remaining after the coupled emission process. Hence the process is strongly localized in k-space. In haxagonal boron nitride, which has a lattice and band structure very similar to graphite, inelastic scattering produces very different effects on the observed spectra. Here, the inelastic losses are coupled to a strong resonant elastic scattering process, in which the intermediate state is a localized core exciton and the final state is a localized valence exciton, so that the electronic excitation is strongly localized in real rather than reciprocal space.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 603572
- Report Number(s):
- LBNL--39981; ON: DE97007345; CNN: Grant DMR-9420425
- Country of Publication:
- United States
- Language:
- English
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