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Title: Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study

Abstract

The authors have performed angle-resolved x-ray photoelectron diffraction (XPD) from a Si(100)-c(4x2) surface to study the structural origin of Si-2p core-level shifts. In the experiment, the highly resolved surface Si-2p core-level spectra were measured as a fine grid of hemisphere and photon energies, using the SpectroMicroscopy Facility {open_quotes}ultraESCA{close_quotes} instrument. By carefully decomposing the spectra into several surface peaks, the authors are able to obtain surface-atom resolved XPD patterns. Using a multiple scattering analysis, they derived a detailed atomic model for the Si(100)-c(4x2) surface. In this model, the asymmetric dimers were found tilted by 11.5 plus/minus 2.0 degrees with bond length of 2.32 plus/minus 0.05{angstrom}. By matching model XPD patterns to experiment, the authors can identify which atoms in the reconstructed surface are responsible for specific photoemission lines in the 2p spectrum.

Authors:
;  [1];  [2]
  1. Univ. of Wisconsin, Milwaukee, WI (United States)
  2. Univ. of Wisconsin, Milwaukee, WI (United States); Ernest Orlando Lawrence Berkeley National Lab., CA (United States); and others
Publication Date:
Research Org.:
Lawrence Berkeley Lab., CA (United States)
OSTI Identifier:
603550
Report Number(s):
LBNL-39981
ON: DE97007345; CNN: Grant DMR-9413475; TRN: 98:009544
DOE Contract Number:  
FG02-92ER45468
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: Apr 1997; Related Information: Is Part Of Advanced light source: Compendium of user abstracts 1993--1996; PB: 622 p.
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; SILICON; MONOCRYSTALS; PHOTOELECTRON SPECTROSCOPY; INNER-SHELL EXCITATION; EXCITED STATES; CRYSTAL STRUCTURE; SOFT X RADIATION

Citation Formats

Chen, X., Tonner, B. P., and Denlinger, J. Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study. United States: N. p., 1997. Web. doi:10.2172/603550.
Chen, X., Tonner, B. P., & Denlinger, J. Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study. United States. https://doi.org/10.2172/603550
Chen, X., Tonner, B. P., and Denlinger, J. Tue . "Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study". United States. https://doi.org/10.2172/603550. https://www.osti.gov/servlets/purl/603550.
@article{osti_603550,
title = {Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study},
author = {Chen, X. and Tonner, B. P. and Denlinger, J.},
abstractNote = {The authors have performed angle-resolved x-ray photoelectron diffraction (XPD) from a Si(100)-c(4x2) surface to study the structural origin of Si-2p core-level shifts. In the experiment, the highly resolved surface Si-2p core-level spectra were measured as a fine grid of hemisphere and photon energies, using the SpectroMicroscopy Facility {open_quotes}ultraESCA{close_quotes} instrument. By carefully decomposing the spectra into several surface peaks, the authors are able to obtain surface-atom resolved XPD patterns. Using a multiple scattering analysis, they derived a detailed atomic model for the Si(100)-c(4x2) surface. In this model, the asymmetric dimers were found tilted by 11.5 plus/minus 2.0 degrees with bond length of 2.32 plus/minus 0.05{angstrom}. By matching model XPD patterns to experiment, the authors can identify which atoms in the reconstructed surface are responsible for specific photoemission lines in the 2p spectrum.},
doi = {10.2172/603550},
url = {https://www.osti.gov/biblio/603550}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {4}
}