Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study
- Univ. of Wisconsin, Milwaukee, WI (United States)
- Univ. of Wisconsin, Milwaukee, WI (United States); Ernest Orlando Lawrence Berkeley National Lab., CA (United States); and others
The authors have performed angle-resolved x-ray photoelectron diffraction (XPD) from a Si(100)-c(4x2) surface to study the structural origin of Si-2p core-level shifts. In the experiment, the highly resolved surface Si-2p core-level spectra were measured as a fine grid of hemisphere and photon energies, using the SpectroMicroscopy Facility {open_quotes}ultraESCA{close_quotes} instrument. By carefully decomposing the spectra into several surface peaks, the authors are able to obtain surface-atom resolved XPD patterns. Using a multiple scattering analysis, they derived a detailed atomic model for the Si(100)-c(4x2) surface. In this model, the asymmetric dimers were found tilted by 11.5 plus/minus 2.0 degrees with bond length of 2.32 plus/minus 0.05{angstrom}. By matching model XPD patterns to experiment, the authors can identify which atoms in the reconstructed surface are responsible for specific photoemission lines in the 2p spectrum.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- DOE Contract Number:
- FG02-92ER45468
- OSTI ID:
- 603550
- Report Number(s):
- LBNL--39981; ON: DE97007345; CNN: Grant DMR-9413475
- Country of Publication:
- United States
- Language:
- English
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