Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study

doi:https://doi.org/10.2172/603550

Title: Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study

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Abstract

The authors have performed angle-resolved x-ray photoelectron diffraction (XPD) from a Si(100)-c(4x2) surface to study the structural origin of Si-2p core-level shifts. In the experiment, the highly resolved surface Si-2p core-level spectra were measured as a fine grid of hemisphere and photon energies, using the SpectroMicroscopy Facility {open_quotes}ultraESCA{close_quotes} instrument. By carefully decomposing the spectra into several surface peaks, the authors are able to obtain surface-atom resolved XPD patterns. Using a multiple scattering analysis, they derived a detailed atomic model for the Si(100)-c(4x2) surface. In this model, the asymmetric dimers were found tilted by 11.5 plus/minus 2.0 degrees with bond length of 2.32 plus/minus 0.05{angstrom}. By matching model XPD patterns to experiment, the authors can identify which atoms in the reconstructed surface are responsible for specific photoemission lines in the 2p spectrum.

Authors:

Chen, X.; Tonner, B. P. ^[1]; Denlinger, J. ^[2]

Univ. of Wisconsin, Milwaukee, WI (United States)
Univ. of Wisconsin, Milwaukee, WI (United States); Ernest Orlando Lawrence Berkeley National Lab., CA (United States); and others

Publication Date:: 1997-04-01

Research Org.:: Lawrence Berkeley Lab., CA (United States)

OSTI Identifier:: 603550

Report Number(s):: LBNL-39981
ON: DE97007345; CNN: Grant DMR-9413475; TRN: 98:009544

DOE Contract Number:: FG02-92ER45468

Resource Type:: Technical Report

Resource Relation:: Other Information: PBD: Apr 1997; Related Information: Is Part Of Advanced light source: Compendium of user abstracts 1993--1996; PB: 622 p.

Country of Publication:: United States

Language:: English

Subject:: 66 PHYSICS; SILICON; MONOCRYSTALS; PHOTOELECTRON SPECTROSCOPY; INNER-SHELL EXCITATION; EXCITED STATES; CRYSTAL STRUCTURE; SOFT X RADIATION

Citation Formats


                    Chen, X., Tonner, B. P., and Denlinger, J. Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study.  United States: N. p., 1997. 
        Web.  doi:10.2172/603550.

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                    Chen, X., Tonner, B. P., & Denlinger, J. Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study.  United States.  https://doi.org/10.2172/603550

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                    Chen, X., Tonner, B. P., and Denlinger, J. Tue .  
        "Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study".  United States.  https://doi.org/10.2172/603550.  https://www.osti.gov/servlets/purl/603550.

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@article{osti_603550,

  title        = {Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study},

  author       = {Chen, X. and Tonner, B. P. and Denlinger, J.},

  abstractNote = {The authors have performed angle-resolved x-ray photoelectron diffraction (XPD) from a Si(100)-c(4x2) surface to study the structural origin of Si-2p core-level shifts. In the experiment, the highly resolved surface Si-2p core-level spectra were measured as a fine grid of hemisphere and photon energies, using the SpectroMicroscopy Facility {open_quotes}ultraESCA{close_quotes} instrument. By carefully decomposing the spectra into several surface peaks, the authors are able to obtain surface-atom resolved XPD patterns. Using a multiple scattering analysis, they derived a detailed atomic model for the Si(100)-c(4x2) surface. In this model, the asymmetric dimers were found tilted by 11.5 plus/minus 2.0 degrees with bond length of 2.32 plus/minus 0.05{angstrom}. By matching model XPD patterns to experiment, the authors can identify which atoms in the reconstructed surface are responsible for specific photoemission lines in the 2p spectrum.},

  doi          = {10.2172/603550},

  url          = {https://www.osti.gov/biblio/603550},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1997},

  month        = {4}

}

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