Reflectivity of the modes at the facets of buried heterostructure injection lasers

Journal Article · Tue Apr 01 04:00:00 EST 1986 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1986.1072998· OSTI ID:6033989

Handleman, D; Hardy, A; Katzir, A

The mode reflectivity of narrow stripe geometry buried-heterostructure GaAs/GaAlAs lasers was computed taking into account lateral confinement, as well as transverse confinement. The reflectivity was found to increase with increasing of the junction width, up to the broad-area value, in contrast to results obtained previously. The difference between the lowest computed reflectivities and the broad-area values were found to be 10-25 percent. Lateral confinement should therefore be considered in cases where single-mode confinement and mode reflectivity are important.

• Research Organization: School of Physics and Astronomy, Tel Aviv University, Ramat Aviv, Tel Aviv 69978
• OSTI ID: 6033989
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-22:4; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DIMENSIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE PROPERTIES
WIDTH