Quantum theory of the complex dielectric constant of free carriers in polar semiconductors
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
The optical constants and reflectivity of a semiconductor are known as functions of the real and imaginary parts of the complex dielectric constant. The imaginary part of the complex dielectric constant e/sub 2/ is proportional to the optical conductivity, which has recently been calculated from the quantum density matrix equation of motion. The expression obtained for e/sub 2/ reduces to the Drude result, as obtained from the quasi-classical Boltzmann transport equation, in the limit of low frequencies and elastic scattering mechanisms, and to the quantum result found using time dependent perturbation theory in the limit of high frequencies. This paper derives the real part of the complex dielectric constant e/sub 1/ for an III-V or II-VI semiconductor with the band structure of the Kane theory, using the quantum density matrix method. The relation of e/sub 1/ to the second order perturbation energy of the system is shown, and the reflectivity is a minimum when the second order perturbation energy vanishes. The quantum calculation for e/sub 1/ gives approximately the same result as the Drude theory, except near the fundamental absorption edge, and reduces to the Drude result at low frequencies. Using the complex dielectric constant, the real and imaginary parts of the complex refractive index, the skin depth, the surface impedance, and the reflectivity are found. The plasma resonance is examined. The surface impedance and the skin depth are shown to reduce to the usual classical result in the limit that e/sub 1/ = 0 and w /SUB r/ << 1, where w is the angular frequency of the applied field and /SUB r/ is the electron scattering time.
- Research Organization:
- Boston Univ., Dept. of Physics, Boston, MA 02215
- DOE Contract Number:
- AC02-79ER10444
- OSTI ID:
- 6030196
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-18:9; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Quantum theory of the complex dielectric constant of free carriers in polar semiconductors
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Journal Article
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Wed Sep 01 00:00:00 EDT 1982
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:6165963
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Fri Jun 01 00:00:00 EDT 1984
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Related Subjects
656000* -- Condensed Matter Physics
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOLTZMANN EQUATION
DIELECTRIC PROPERTIES
DIFFERENTIAL EQUATIONS
ELECTRICAL PROPERTIES
ENERGY
EQUATIONS
FIELD THEORIES
FREE ENERGY
MATERIALS
OPTICAL PROPERTIES
OPTICS
PARTIAL DIFFERENTIAL EQUATIONS
PHYSICAL PROPERTIES
QUANTUM FIELD THEORY
REFLECTIVITY
REFRACTIVITY
SEMICONDUCTOR MATERIALS
STEADY-STATE CONDITIONS
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOLTZMANN EQUATION
DIELECTRIC PROPERTIES
DIFFERENTIAL EQUATIONS
ELECTRICAL PROPERTIES
ENERGY
EQUATIONS
FIELD THEORIES
FREE ENERGY
MATERIALS
OPTICAL PROPERTIES
OPTICS
PARTIAL DIFFERENTIAL EQUATIONS
PHYSICAL PROPERTIES
QUANTUM FIELD THEORY
REFLECTIVITY
REFRACTIVITY
SEMICONDUCTOR MATERIALS
STEADY-STATE CONDITIONS
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES