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U.S. Department of Energy
Office of Scientific and Technical Information

Infrared-absorption spectrum of free carriers in polar semiconductors. Progress report, July 1, 1981-June 30, 1982

Technical Report ·
OSTI ID:5418016
The high rate of change in integrated electronics, laser, and semiconductor device characteristics, generated by ongoing improvement in fabrication technology leading to smaller and smaller devices, has necessitated a reexamination of the foundations of transport theory. Of particular interest is the formulation of the necessary quantum extension of classical or quasi-classical theory in the limits of small length scales, high frequencies, and high field intensities. A fundamental mechanism by which optical materials fail under intense illumination, the problem of electron heating by multiphoton free carrier absorption or inverse bremsstrahlung in an intense radiation field, has been the primary topic of investigation during the preceding year. In addition, the effect on the real and imaginary parts of the complex refractive index, and hence on the reflectivity and transmission of a compound semiconductor, of quantum effects at high frequencies have been studied. The real and imaginary parts of the complex refractive index and the reflectivity have been calculated for samples of InP, GaAs, and InAs as functions of frequency and carrier concentration, in terms of a quantum extension of the Drude theory. A summary of results which have been presented in the literature in the preceding year is given.
Research Organization:
Boston Univ., MA (USA)
DOE Contract Number:
AS02-79ER10444
OSTI ID:
5418016
Report Number(s):
DOE/ER/10444-5; ON: DE82009101
Country of Publication:
United States
Language:
English