Nonplanar large optical cavity GaAs/GaAlAs semiconductor laser

Journal Article · Thu Nov 15 04:00:00 EST 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90967· OSTI ID:6013340

Burnham, R D; Scifres, D R; Streifer, W; Peled, S

We report pulsed room-temperature operation of a nonplanar large optical cavity semiconductor laser. As a result of a single LPE growth in an etched channeled substrate, a curved cavity is created which guides the laser light in both transverse dimensions. Representative lasers exhibit 50-mA thresholds, 40% differential quantum efficiency, 25-mW power output without kinks, and stable near- and far-field optical patterns.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 6013340
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
DATA
EFFICIENCY
EPITAXY
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER CAVITIES
LASERS
PNICTIDES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
SURFACE FINISHING
WAVEGUIDES