Photoelectrochemical investigation of CdSiAs/sub 2/

Journal Article · Wed Feb 01 04:00:00 EST 1989 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2096640· OSTI ID:6005442

Cotting, T; VanKanel, H; Leicht, G; Levy, F

The CdSiAs/sub 2//aqueous electrolyte interface has been investigated by current-potential, electrolyte-electroreflectance (EER), and capacity measurements. The direct gap of 1.55 eV has been verified by EER and quantum yield measurements. For E parallel c the quantum efficiency exceeds 50% over a broad spectral range. The doping concentration obtained from Mott-Schottky plots is approx.2 . 10/sup 17//cm/sup 3/. Under steady-state conditions the Mott-Schottky plots yielded a flatband potential of -0.19 V/sub SCE/ in 1M H/sub 2/SO/sub 4/. Due to anodic etching it tends to shift to +0.3 V/sub SCE/.

• Research Organization: Lab. fur Festkorperphysik, ETH Zurich, Zurich (CH); Institut de physique appliquee, EPF Lausanne, Lausanne (CH)
• OSTI ID: 6005442
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 136:2; ISSN JESOA
• Country of Publication: United States
• Language: English

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