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Impedance study of surface optimization of n-CuInSe/sub 2/ in photoelectrochemical solar cells

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2108503· OSTI ID:5838247
Impedance measurements were used to complement previously described electrolyte electroreflectance studies in an attempt to understand the improvement in photoelectrochemical performance of single-crystal n-CuInSe/sub 2/ in contact with aqueous polyiodide electrolyte, due to etching and oxidation. The authors found that etching removes most of the fast surface states from the interface, retaining less than 1% of a monolayer of states of two different energies: one centered at 0.17 eV below the conduction band and another one is located around the middle of the gap, 0.45 eV below the conduction band. The flatband potential of the etched sample was found to be -0.69V vs. the solution potential, in agreement with the electroreflectance results. Only one of the surface states, the one close to the conduction band, was found to be responsible for surface recombination.
Research Organization:
Dept. of Physics, Brooklyn College of the City Univ. of New York, Brooklyn, NY 11210
OSTI ID:
5838247
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 133:1; ISSN JESOA
Country of Publication:
United States
Language:
English