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Electrolyte electroreflectance study of surface optimization of n-CuInSe/sub 2/ in photoelectrochemical solar cells

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2108502· OSTI ID:5838261
Electrolyte electroreflectance is used to show that the main effect of Br/sub 2//MeOH etching of CuInSe/sub 2/ is to remove the pinning of the Fermi level, which is due to a monolayer of states located 0.17V positive to the potential of the solution. The flatband potential of CuInSe/sub 2/ in polysulfide solution was found to be -0.62V vs. the solution potential, while in polyiodide solution it is shifted to -.070V vs. the potential of that solution. This shift can explain some of the improvement in performance in polyiodide compared to polysulfide. The bandgap of CuInSe/sub 2/ was found to be a direct transition at 1.01 eV with a three-dimensional critical point.
Research Organization:
Dept. of Physics, Brooklyn College of the City Univ. of New York, Brooklyn, NY 11210
OSTI ID:
5838261
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 133:1; ISSN JESOA
Country of Publication:
United States
Language:
English