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Infrared multiphoton decomposition of monosilane sensitized by silicon tetrafluoride

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100225a038· OSTI ID:6000506

The decomposition of SiH/sub 4/ sensitized by the multiphoton absorption of unfocussed infrared laser radiation by SiF/sub 4/, has been studied at a fluence of 0.31 J/cm/sup 2/ and over a total pressure range of 3-16 torr. In contrast to the direct infrared multiphoton induced decomposition, the only volatile products observed are H/sub 2/ and Si/sub 2/H/sub 6/ which, within experimental error, are formed in equal amounts, It is proposed that collisional energy transfer from vibrationally excited SiF/sub 4/ produces internally excited SiH/sub 4/ to form Si/sub 2/H/sub 6/. The absence of Si/sub 3/H/sub 8/ and higher silanes in the volatile products, which is characteristic of other silane decomposition studies, is attributed to the absence of SiH/sub 3/ radicals and the fact that the SiH/sub 4/ molecules attacked by SiH/sub 2/ contain only that excess vibrational energy characteristic of thermal equilibrium at 300 K.

Research Organization:
The Pennsylvania State Univ., University Park
DOE Contract Number:
AC02-76ER03416
OSTI ID:
6000506
Journal Information:
J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 87:2; ISSN JPCHA
Country of Publication:
United States
Language:
English