Infrared multiphoton decomposition of monosilane
The decomposition of SiH/sub 4/ by infrared radiation from a pulsed CO/sub 2/ TEA laser at 944.19 cm/sup -1/ has been studied in the pressure range of 10 to 22 torr and at a fluence of 1.0 J/cm/sup 2/. The products observed are H/sub 2/, Si/sub 2/H/sub 6/, Si/sub 3/H/sub 8/, Si/sub 4/H/sub 10/, Si/sub 5/H/sub 12/, and a solid (SiH/sub x/)/sub n/. The energy absorption from the laser beam increases with increasing pressure of SiH/sub 4/ and/or of He, showing that collisions are necessary to pump molecules into the quasicontinuum from which resonant absorption of the laser photon occurs readily. The addition of He also increases the decomposition rate showing that the decomposition is a multiphoton decomposition and not a purely thermal reaction. The primary dissociation of SiH/sub 4/ is to H/sub 2/ and SiH/sub 2/ and it is the further reactions initiated by attack of SiH/sub 2/ on SiH/sub 4/ that cause the observed decomposition. It is shown that the results are accounted for by a Boltzmann distribution of infrared photons in SiH/sub 4/ and a reaction mechanism identical with that shown to occur in the pyrolysis of SiH/sub 4/.
- Research Organization:
- Pennsylvania State Univ., University Park
- DOE Contract Number:
- AS02-76ER03416
- OSTI ID:
- 5823230
- Journal Information:
- J. Am. Chem. Soc.; (United States), Vol. 103:23
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
HYDROGEN PRODUCTION
SILANES
DECOMPOSITION
EXPERIMENTAL DATA
LASER RADIATION
CHEMICAL REACTIONS
DATA
ELECTROMAGNETIC RADIATION
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
NUMERICAL DATA
RADIATIONS
SILICON COMPOUNDS
080100* - Hydrogen- Production
400201 - Chemical & Physicochemical Properties