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Influence of the distribution of a shallow impurity on the characteristics of silicon surface-barrier detectors

Journal Article · · Sov. Phys. - Semicond. (Engl. Transl.); (United States)
OSTI ID:5998636
; ; ; ;
High purity n-type Si was used to fabricate surface-barrier nuclear radiation detectors in which the barrier was an evaporated gold film. A spatial distribution of the energy resolution and carrier-collection time were found to be correlated with the impurity distribution: gradients of this distribution resulted in a reduction in the energy resolution and an increase in the carrier-collection time. (AIP)
Research Organization:
Institute of Nuclear Research, Academy of Sciences of the Ukrainian SSR, Kiev
OSTI ID:
5998636
Journal Information:
Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 13:1; ISSN SPSEA
Country of Publication:
United States
Language:
English

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Related Subjects

440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CARRIER MOBILITY
DISTRIBUTION
ENERGY RESOLUTION
IMPURITIES
MEASURING INSTRUMENTS
MOBILITY
RADIATION DETECTORS
RESOLUTION
SEMICONDUCTOR DETECTORS
SPATIAL DISTRIBUTION
SURFACE BARRIER DETECTORS