Interference effects probed by photoreflectance spectroscopy

Journal Article · Sat Jul 01 04:00:00 EDT 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.343882· OSTI ID:5998052

Huang, D; Mui, D; Morkoc, H

We report on oscillations in the photoreflectance (PR) spectra in the energyrange below the band gap of GaAs on samples containing GaAs/AlGaAs quantum wellsand the other multilayers grown on Si-doped GaAs substrates. The PR spectra withthe quantum well chemically removed continue to show these oscillations,indicating that they are not related to the quantum well. These oscillations,which are probed by the modulation technique, are attributed to the interferenceeffect of two light beams reflected from different interfaces of the sample.These spectra are calculated and good agreement with experimental data isobtained. We find that the interference effect distorts the line shape of the PRfeatures associated with quantum wells and band edge of bulk semiconductors,especially at the low-energy side. Therefore, this effect must be taken intoaccount during analysis. As an application, this interference effect can be usedto accurately measure epilayer thicknesses.

• Research Organization: Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1101 W. Springfield Avenue, Urbana, Illinois 61801(US)
• DOE Contract Number: AC02-76ER01198
• OSTI ID: 5998052
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 66:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFERENCE
LAYERS
MODULATION
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
OSCILLATIONS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SPECTROSCOPY
SURFACE PROPERTIES