Resonant intervalley scattering in GaAs

Journal Article · Mon Dec 31 04:00:00 EST 1990 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.65.3429· OSTI ID:5997770

Bigot, J; Portella, M T; Schoenlein, R W; Cunningham, J E; Shank, C V ^[1]

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1. Lawrence Berkeley Laboratory, University of California, One Cyclotron Road, MS:70-110A, Berkeley, California 94720 (US)

The dynamics of intervalley scattering of electrons is investigated in GaAs with 6 fs optical pulses at room temperature. We report the observation of a resonant coupling'' between the {Gamma} and {ital X} conduction bands. This effect slows the apparent rate of scattering of carriers in the {Gamma} valley at energies near the minimum of the {ital X} valley.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5997770
• Journal Information: Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 65:27; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
COMPRESSION
DATA
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INELASTIC SCATTERING
INFORMATION
MEDIUM TEMPERATURE
NUMERICAL DATA
PNICTIDES
PULSES
RESONANCE SCATTERING
SCATTERING