Pressure-induced resonance broadening of exciton line shapes in semiconductors: Direct determination of intervalley scattering rates in GaAs

Journal Article · Fri Nov 15 04:00:00 EST 1991 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.44.11339· OSTI ID:5057067

Satpathy, S; Chandrasekhar, M; Chandrasekhar, H R; Venkateswaran, U ^[1]

---

1. Department of Physics and Astronomy, University of Missouri, Columbia, Missouri (USA)

We show that the exciton photoluminescence line shape in the GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As quantum wells under pressure is broadened by hybridization of the {Gamma} exciton with the {ital X} and the {ital L} continua via electron-phonon coupling. Furthermore, we demonstrate the pressure tuning of the resonance-broadening effect which can be used to extract the electron-phonon coupling parameters directly. For GaAs we estimate the intervalley electron-phonon deformation potential {ital D}{sub {Gamma}{ital X}} to be 10.7{plus minus}0.7 eV/A. The resonance effect should be observable in other semiconductors as well.

• DOE Contract Number: FG02-89ER45402
• OSTI ID: 5057067
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:20; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
ELECTRON-PHONON COUPLING
EXCITONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HAMILTONIANS
HYBRIDIZATION
LINE BROADENING
LUMINESCENCE
MATHEMATICAL OPERATORS
PHOTOLUMINESCENCE
PNICTIDES
PRESSURE EFFECTS
QUANTUM OPERATORS
QUASI PARTICLES
RESONANCE