Optical spectroscopy of acceptors in semiconductors: I. Acceptor complexes in neutron transmutation-doped silicon. II. Piezospectroscopy of beryllium double acceptors in germanium

Miscellaneous · Sun Jan 01 00:00:00 EST 1989

OSTI ID:5997753

LaBrec, C R

Substitutional group III impurities in group IV elemental semiconductors bind a hole from the valence band and are solid-state analogs of the hydrogen atom; likewise, group II impurities bind two holes and are analogs of the helium atom. In these materials, the electronic transitions from the acceptor s-like ground state to the p-like excited states are infrared active. A high-resolution Fourier transform spectrometer, and a liquid-helium cooled germanium bolometer and glass sample cryostat are ideally suited to study these effects. When silicon is exposed to neutron radiation, a fraction of the atoms are converted to phosphorus. After annealing, these impurity atoms occupy substitutional locations and are thus donors. When the initial crystal is p-type and the final phosphorus concentration is less than that of the acceptor, the sample is left p-type but highly compensated. This results in broadening of the transition lines. However, before complete annealing, it is discovered that a new, extremely shallow acceptor is formed, with an ionization energy of 28.24 meV, which is far shallower than any previously known. Neutral Be in Ge is known to be a double acceptor. Under uniaxial stress, the single hole (1s){sup 2} {yields} (1s)(np) excitation spectrum shows splittings and polarization effects. These piezospectroscopic effects were observed for a compressive force {rvec F} {parallel} (111) and {rvec F} {parallel} (100). The phenomenological shear deformation potential constants have been deduced for the ground and excited states of the D transition.

• Research Organization: Purdue Univ., Lafayette, IN (USA)
• OSTI ID: 5997753
• Resource Relation: Other Information: Thesis (Ph.D)
• Country of Publication: United States
• Language: English

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