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U.S. Department of Energy
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Thin polycrystalline films of indium phosphide on low-cost substrates. Final report, September 30, 1976-March 31, 1978

Technical Report ·
OSTI ID:5990099
A program for development of the metal-organic chemical vapor deposition (MO-CVD) process for making thin-film polycrystalline indium phosphide solar cells on inexpensive substrates is described. A new reactor system was designed and constructed and its performance characterized. The triethylindium-PH/sub 3/ reaction chemistry was investigated and characterized experimentally, and reactor design and deposition parameters were adjusted to achieve InP deposition rates up to 12 microns/h. Deposition parameters were established for growth of high-quality epitaxial undoped (n-type) InP films on single-crystal substrates of GaAs and InP. Deposition parameters were established for growing epitaxial p-type InP films on single crystal GaAs and InP substrates of several orientations by doping with diethylzinc during growth. Several potentially low-cost substrate materials (glasses, metal sheet, films of metals and semiconductors on glasses) were identified and used for growth of polycrystalline InP.
Research Organization:
Rockwell International Corp., Anaheim, CA (USA). Eleectronics Research Center
DOE Contract Number:
AC04-76ET20256
OSTI ID:
5990099
Report Number(s):
DOE/ET/20256-T1; ALO-3727-6; ON: DE82002100
Country of Publication:
United States
Language:
English