Thin films of InP for photovoltaic energy conversion. Second quarterly technical progress report, September 29, 1979-December 28, 1979
A research study is being conducted for the purpose of developing a low-cost high-efficiency thin-film InP heterojunction solar cell based on InP films grown by the metalorganic chemical vapor deposition (MO-CVD) process on suitable substrates. Heterostructure devices of CdS/InP (and possibly indium-tin oxide/InP) are to be prepared at Stanford University using the MO-CVD InP films grown at Rockwell. The work of the second quarter of the program is summarized. Growth parameters have been established using new triethylindium, diethylzinc (DEZn), and PH/sub 3/ sources for the formation of Zn-doped p-type InP films in the modified MO-CVD reactor system. Appropriately doped films have been prepared and sent to Stanford for use in deposition of CdS layers. An investigation of the properties of grains and grain boundaries in polycrystalline InP films was begun using several polycrystalline film/substrate combinations, including tungsten (W) layers produced by roller coating and screen-printing on polycrystalline alumina, and mechanically abraded surfaces of single-crystal bulk InP:Fe wafers. An investigation was also undertaken into the use of GaP as an alternative intermediate-layer material to GaAs on low-cost substrates for subsequent growth of InP films. Auger electron spectroscopy analysis done on a group of specially prepared Zn-treated films of polycrystalline InP indicated the presence of Zn at surfaces of InP:Zn films grown on Al and/or heat-treated in high concentrations of DEZn at approx. 600/sup 0/C. However, no Zn was detected in polycrystalline films grown under deposition conditions that would be expected to produce highly doped p-type epitaxial films if single-crystal substrates were used.
- Research Organization:
- Rockwell International Corp., Anaheim, CA (USA). Electronic Devices Div.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-79ET23004
- OSTI ID:
- 5381125
- Report Number(s):
- COO-3004-2
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980
Thin films of InP for photovoltaic energy conversion. Third quarterly technical progress report, December 29, 1979-March 28, 1980
Related Subjects
36 MATERIALS SCIENCE
INDIUM PHOSPHIDE SOLAR CELLS
FABRICATION
INDIUM PHOSPHIDES
CHEMICAL VAPOR DEPOSITION
MICROSTRUCTURE
AUGER ELECTRON SPECTROSCOPY
CADMIUM SULFIDES
CHEMICAL REACTORS
EPITAXY
FILMS
GRAIN BOUNDARIES
INDIUM OXIDES
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
TIN OXIDES
VAPOR DEPOSITED COATINGS
ZINC ADDITIONS
ALLOYS
CADMIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
COATINGS
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
EQUIPMENT
INDIUM COMPOUNDS
INORGANIC PHOSPHORS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORS
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TIN COMPOUNDS
ZINC ALLOYS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture