Dose rate dependence and time constant of the ion-beam-induced crystallization mechanism in silicon
The influence of dose rate on the ion-beam-induced crystallization of amorphous layers in silicon has been investigated. The amorphous layers were produced by self-ion implantation both in bulk silicon and in silicon on sapphire. Subsequent recrystallization was induced at 200 to 400 /sup 0/C by Ne, Si, Ar, and Kr ion beams of 300 keV energy passing through the amorphous layers. Rutherford backscattering/channeling measurements showed that the regrowth rate decreased with increasing dose rate. This behavior was more pronounced for heavy ions where high dose rates and/or low temperatures could reverse the recrystallization and induce further amorphous growth of the layer. In this new solid-phase growth regime, the amorphous/crystalline interface moved inwards into the crystal in a manner similar to an epitaxial process. An intermittent beam experiment yielded a time constant for the ion beam induced crystallization mechanism of the order of 0.3 s. The time constant and a scaling law for different ions support a model where the planar growth is caused by the accumulation of divacancies in the interface region.
- Research Organization:
- Department of Physics, Chalmers University of Technology, S-412 96 Goeteborg, Sweden
- OSTI ID:
- 5977504
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:12; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
AMORPHOUS STATE
BEAMS
CHALCOGENIDES
CHANNELING
COLLISIONS
CORUNDUM
CRYSTAL GROWTH
CRYSTALLIZATION
ELEMENTS
EPITAXY
ION BEAMS
ION CHANNELING
ION COLLISIONS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SAPPHIRE
SEMIMETALS
SILICON