Method of synthesizing cubic system boron nitride

Patent · Tue Oct 13 04:00:00 EDT 1987

OSTI ID:5975328

Yuzu, S; Sumiya, H; Degawa, J

A method is described for synthetically growing cubic system boron nitride crystals by using boron nitride sources, solvents for dissolving the boron nitride sources, and seed crystals under conditions of ultra-high pressure and high temperature for maintaining the cubic system boron nitride stable. The method comprises the following steps: preparing a synthesizing vessel having at least two chambers, arrayed in order in the synthesizing vessel so as to be heated according to a temperature gradient; placing the solvents having different eutectic temperatures in each chamber with respect to the boron nitride sources according to the temperature gradient; placing the boron nitride source in contact with a portion of each of the solvents heated at a relatively higher temperature and placing at least a seed crystal in a portion of each of the solvents heated at a relatively lower temperature; and growing at least one cubic system boron nitride crystal in each of the solvents in the chambers by heating the synthesizing vessel for establishing the temperature gradient while maintaining conditions of ultra-high pressure and high temperature.

• Assignee: Sumitomo Electric Industries, Ltd., Osaka
• Patent Number(s): US 4699687
• OSTI ID: 5975328
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
BORON COMPOUNDS
BORON NITRIDES
CHEMICAL PREPARATION
CHEMICAL REACTORS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CUBIC LATTICES
DISSOLUTION
HEATING
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
PRESSURE DEPENDENCE
PRESSURIZING
SOLVENTS
SYNTHESIS
TEMPERATURE DEPENDENCE