Molecular-beam epitaxy of GaSb/AlSb optical device layers on Si(100)

Journal Article · Sun Jun 01 04:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336734· OSTI ID:5972333

Malik, R J; van der Ziel, J P; Levine, B F; Bethea, C G; Walker, J

We report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular-beam epitaxy. High-quality films were achieved in spite of the large lattice constant mismatch of 12%. Room temperature, optically pumped pulsed lasers emitting at 1.8 ..mu..m have been demonstrated. Lateral photoconductive detectors with responsivities of 0.18 A/W have also been made. The film nucleation on the Si substrate was observed in situ by reflection high-energy electron diffraction. Characterization of the grown epilayers and preliminary optical device results are described.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5972333
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
COATINGS
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
INFRARED RADIATION
LASER RADIATION
LASERS
LAYERS
MOLECULAR BEAM EPITAXY
NUCLEATION
OPTICAL PUMPING
PHOTODETECTORS
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SENSITIVITY
SILICON
SPECTRAL RESPONSE
SURFACE COATING
VAPOR DEPOSITED COATINGS