Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

Journal Article · Thu Nov 01 04:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4761970· OSTI ID:22089554

Hosseini Vajargah, S.; Botton, G. A. ^[1]; Ghanad-Tavakoli, S. ^[2]; Preston, J. S.; Kleiman, R. N. ^[3]

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1. Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
2. Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
3. Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

• OSTI ID: 22089554
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 112; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
BONDING
CRYSTAL GROWTH
DISLOCATIONS
DISTRIBUTION
FILMS
GALLIUM ANTIMONIDES
INTERFACES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
PHASE STUDIES
SEMICONDUCTOR MATERIALS
SILICON
STRAINS
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY