Improvement of the bulk laser damage threshold of potassium dihydrogen phosphate crystals by ultraviolet irradiation

Journal Article · Mon Apr 21 04:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96638· OSTI ID:5972279

Yokotani, A; Sasaki, T; Yoshida, K; Yamanaka, T; Yamanaka, C

Potassium dihydrogen phosphate (KDP) crystals were grown under the irradiation of ultraviolet light. The bulk laser damage threshold was improved to two to three times (15-20 J/cm/sup 2/) compared to the case of crystals grown by conventional methods. Microbes such as germs and bacteria are frequently generated in the KDP solution with the usual growth method. The ultraviolet light reduces or eliminates organic materials such as microbes or their carcasses incorporated into the crystal, which are the cause of low damage threshold.

• Research Organization: Institute of Laser Engineering, Osaka University, Suita, Osaka 565, Japan
• OSTI ID: 5972279
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:16; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALKALI METAL COMPOUNDS
BACTERIA
DAMAGE
ELECTROMAGNETIC RADIATION
HYDRIDES
HYDROGEN COMPOUNDS
LASER MATERIALS
LASERS
MATERIALS
MICROORGANISMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
POTASSIUM COMPOUNDS
POTASSIUM HYDRIDES
POTASSIUM PHOSPHIDES
RADIATION EFFECTS
RADIATIONS
SOLID STATE LASERS
ULTRAVIOLET RADIATION