Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Improving the bulk laser damage resistance of potassium dihydrogen phosphate crystals by pulsed laser irradiation

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.93095· OSTI ID:5770555
We have obtained an increase (factors of 1.5--3.0) in the threshold fluence for laser-induced inclusion damage in crystals of potassium dihydrogen phosphate (KDP) by irradiating the crystals at a fluence below that necessary to cause damage with a single laser pulse (1064-nm, 1-ns). The threshold increase was greatest for less damage resistant samples.
Research Organization:
Lawrence Livermore National Laboratory, P. O. Box 5508, Livermore, California 94550
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
5770555
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:4; ISSN APPLA
Country of Publication:
United States
Language:
English