Ballistic Electron Emission Microscopy for Nonepitaxial Metal/Semiconductor Interfaces

Journal Article · Sun Mar 01 04:00:00 EST 1998 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.80.2433· OSTI ID:597225

Smith, D L ^[1]; Lee, E Y; Narayanamurti, V ^[2]

---

1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
2. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

We present a model of ballistic electron emission microscopy (BEEM) that includes elastic scattering at nonepitaxial metal/semiconductor interfaces. In the weak scattering limit, the model reduces to the traditional description of BEEM. In the strong scattering limit, the model quantitatively describes (1) the relative magnitudes of BEEM currents into the {Gamma} , L , and X channels for Au/GaAs(100) ; (2) the relative magnitudes of the currents for Au/Si(100) and -(111) ; (3) the relative magnitudes of currents for Au/GaAs and Au/Si ; and (4) the absolute magnitudes of the currents for these materials. {copyright} {ital 1998} {ital The American Physical Society}

• OSTI ID: 597225
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 11 Vol. 80; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
EIGENSTATES
ELASTIC SCATTERING
ELECTRON EMISSION
GALLIUM ARSENIDES
GOLD
INTERFACES
MICROSCOPY
SILICON