Monte Carlo dynamics below the Au-GaAs interface for ballistic-electron-emission microscopy

Journal Article · Tue Jun 01 04:00:00 EDT 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.59.15332· OSTI ID:345432

Lee, E Y ^[1]

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1. Sandia National Laboratories, Livermore, California 94551 (United States)

Monte Carlo simulations of hot electron transport in the {Gamma}, {ital L}, and {ital X} valleys of GaAs were performed to study the transport dynamics for ballistic-electron-emission microscopy (BEEM) of mesoscopic objects beneath the Au-GaAs interface. For the starting electron flux distribution at the interface, the distribution for the strong scattering limit of Smith-Lee-Narayanamurti theory [D. L. Smith, E. Y. Lee, and V. Narayanamurti, Phys. Rev. Lett. {bold 80}, 2433 (1998)] was used. For the subsequent electron transport within GaAs, phonon and intervalley scatterings were simulated. With increasing object depth beneath the Au-GaAs interface, the simulations predict (1) significant cooling of hot electrons, on the order of {approximately}3 meV/nm at 1.5 V, and (2) significant redistribution of electrons among the conduction valleys. These effects should be taken into account for proper interpretation of BEEM experiments, especially for large biases and deep objects. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 345432
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 23 Vol. 59; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON EMISSION
GALLIUM ARSENIDES
GOLD
INTERFACES
MICROSCOPY
MONTE CARLO METHOD
PHONONS
SCATTERING
SIMULATION
TRANSPORT THEORY