Kinetics of the thermal oxidation of WSi/sub 2/
The thermal oxidation WSi/sub 2/ films has been studied. Thin films of WSi/sub 2/ were deposited by sputtering on (100) silicon and on oxidized silicon, and then oxidized in dry O/sub 2/ and in steam atmospheres at 1000, 1100, and 1200 /sup 0/C for times up to 30 min. In all cases the dry O/sub 2/ oxidation resulted in films of poor quality. The films had rough surfaces, with WO/sub 3/ present in powder form. However, steam oxidation gave SiO/sub 2/ films of good quality. For WSi/sub 2//Si as well as WSi/sub 2//SiO/sub 2//Si samples, as the oxidation proceeded, WSi/sub 2/ reacted with steam to form SiO/sub 2/ and W/sub 5/Si/sub 3/. The rate of oxidation and activation energy were different for the two types of substrates. For WSi/sub 2/ films deposited directly on Si, the oxidation process was significantly modified because Si atoms rapidly diffused through the silicides and took part in the oxidation process, and thus affected the conversion of WSi/sub 2/ to W/sub 5/Si/sub 3/. However, with WSi/sub 2/ films deposited on oxidized Si, the absence of free Si atoms resulted in the faster transformation of WSi/sub 2/ into W/sub 5/Si/sub 3/.
- Research Organization:
- Integrated Circuits Laboratory, Stanford University, Stanford, California 94305
- OSTI ID:
- 5952992
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ATMOSPHERES
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
COMPARATIVE EVALUATIONS
CRYOGENIC FLUIDS
DATA
DEPOSITION
ELEMENTS
FILMS
FLUIDS
INFORMATION
KINETICS
NONMETALS
OXIDATION
OXYGEN
POWDERS
REACTION KINETICS
SILICIDES
SILICON COMPOUNDS
SPUTTERING
STEAM
SURFACES
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES
VERY HIGH TEMPERATURE