Emission wavelength of AlGaAs-GaAs multiple quantum well lasers

Journal Article · Mon Apr 28 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96613· OSTI ID:5951125

Blood, P; Fletcher, E D; Hulyer, P J; Smowton, P M

We have recorded spontaneous emission spectra from multiple quantum well lasers grown by molecular beam epitaxy with 25-A-wide GaAs wells by opening a window in the top contact stripe. These spectra have a low-energy tail and consequently the gain spectra derived from them show that laser emission occurs at a lower photon energy than the lowest energy confined particle transition. The observed laser wavelength and threshold current are consistent with the position of the peak in the gain spectrum.

• Research Organization: Philips Research Laboratories, Redhill, Surrey RH1 5HA, England
• OSTI ID: 5951125
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 48:17
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
EMISSION SPECTRA
GAIN
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
LASER RADIATION
MOLECULAR BEAM EPITAXY
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SPECTRA
420300* - Engineering- Lasers- (-1989)