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Synthesis of ultrafine Si3N4 powder in RF-RF plasma

Conference · · Ceramic Engineering and Science Proceedings; (United States)
OSTI ID:5949896
A newly designed plasma-CVD apparatus mounted with the RF-RF type plasma torch was introduced to synthesize ultrafine powders of silicon nitride (Si3N4). The RF-RF plasma system (the combination of a main (lower) and controlling (upper) RF plasma) improved the stability of simple RF plasma and solved the impurity problem of dc-RF hybrid plasma. The reaction of SiCl4 and NH3, which were radially injected into the tail flames of the upper and lower plasmas, respectively, yielded near-stoichiometric amorphous powders of Si3N4. The nitrogen content in the products largely depended on the flow rate of the quenching gas, a mixture of NH3 (reactant) and H2. The oxygen content and metal impurities are 2-3 wt pct and less than 200 ppm, respectively. The powder particles had an average diameter of about 15 nm with a narrow size distribution, and showed extreme air sensitivity. Conspicuous crystallazation and particle growth occurred when heated at temperatures above 1400 C. These results suggested that the RF-RF system was a potential reactor for the synthesis of ultrafine powders with excellent sinterability at relatively low temperatures. 9 refs.
OSTI ID:
5949896
Report Number(s):
CONF-910162--
Conference Information:
Journal Name: Ceramic Engineering and Science Proceedings; (United States) Journal Volume: 12
Country of Publication:
United States
Language:
English