Effect of correlations and disorder on electron states in the Mott-Hubbard insulator V sub 2 O sub 3

Journal Article · Tue Jan 01 00:00:00 EST 1991 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.43.607· OSTI ID:5945229

Carter, S A ^[1]; Yang, J; Rosenbaum, T F ^[2]; Spalek, J ^[3]; Honig, J M ^[4]

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1. The James Franck Institute and Department of Chemistry, The University of Chicago, Chicago, Illinois (USA)
2. The James Franck Institute and Department of Physics, The University of Chicago, Chicago, Illinois (USA)
3. Department of Physics, Purdue University, West Lafayette, Indiana (USA)
4. Department of Chemistry, Purdue University, West Lafayette, Indiana (USA)

We compare vanadium-deficient (nonstoichiometric) and titanium-doped vanadium sesquioxide through measurements of the electrical resistivity at a series of hydrostatic pressures, the magnetic susceptibility, and the low-temperature specific heat: all as a function of {ital T}. The pressure dependence of the critical temperature for the discontinuous metal-antiferromagnetic-insulator transition as well as the temperature dependence of the magnetic susceptibility track in the two cases. However, the pressure dependence of the Hubbard gap, the slower than exponential form of the low-temperature resistivity, and the concentration of two-level systems are markedly different for V{sub 1.9967}O{sub 3} and (V{sub 0.99}Ti{sub 0.01}){sub 2}O{sub 3}. We discuss our results in terms of the intra-atomic Coulomb repulsion, which is of comparable magnitude to the bare bandwidth of the vanadium 3{ital d} states. The band splitting in the antiferromagnetic insulating state is argued to cross over to a Slater-type splitting between the subbands narrowed by correlations with a sufficient degree of oxygen nonstoichiometry or Ti doping.

• OSTI ID: 5945229
• Journal Information: Physical Review, B: Condensed Matter; (USA), Vol. 43:1; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
VANADIUM OXIDES
ELECTRONIC STRUCTURE
ANTIFERROMAGNETISM
COULOMB FIELD
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
LOW TEMPERATURE
MAGNETIC SUSCEPTIBILITY
PRESSURE DEPENDENCE
SPECIFIC HEAT
TITANIUM ADDITIONS
ALLOYS
CHALCOGENIDES
DATA
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
INFORMATION
MAGNETIC PROPERTIES
MAGNETISM
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
THERMODYNAMIC PROPERTIES
TITANIUM ALLOYS
TRANSITION ELEMENT COMPOUNDS
VANADIUM COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties