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Optical excitations in Bi sub 2 Sr sub 2 CuO sub 6 and Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 : Evidence for localized (excitonic) and delocalized charge-transfer gaps

Journal Article · · Physical Review, B: Condensed Matter; (USA)
;  [1]
  1. Department of Physics, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 (US)
The optical properties of Bi{sub 2}Sr{sub 2}CuO{sub 6} (2:2:0:1) and Bi{sub 2}Sn{sub 2}CaCu{sub 2}O{sub 8} (2:2:1:2) have been investigated by transmission electron-energy-loss spectroscopy. At low energy, {ital E}{sub loss}{le}10.0 eV, common features are observed in the spectra of these two materials at {ital E}{sub loss}=0.0,{similar to}2.7,3.6, and 4.6 eV. The effective number of charges associated with these excitations has been estimated using the optical-sum rule, and from the ratio of effective charges in the two materials, the origin of this feature has been inferred based on the relative number of Cu-O{sub 2} and Bi-O layers per formula unit. The effective-charge ratio for the free carriers at zero energy loss, {ital N}{sub 2:2:1:2}/{ital N}{sub 2:2:0:1}=5.0, could not be used to determine whether the carriers were in the Cu-O{sub 2} or Bi-O planes because the oxygen doping in the two materials was not known. But at {ital E}{sub loss}=2.7 and 3.6 eV, the effective-charge ratio is 2.6 indicating that these transitions are associated with the Cu-O{sub 2} planes since the ratio is close to 2:1. The effective-charge ratio is 0.9 for {ital E}{sub loss}=4.6 eV suggesting that this excitation is localized in the Bi-O planes. If the two excitations in the Cu-O{sub 2} layers of 2:2:0:1 and 2:2:1:2 are identified with the delocalized and localized charge-transfer reactions (Mark S. Hybertsen, Michael Schluter, and Niels E. Christensen, Phys. Rev. B 39, 9028 (1989)), then the three-band Hubbard parameters {var epsilon}={var epsilon}{sub {ital p}}{minus}{var epsilon}{sub {ital d}} and {ital U}{sub {ital p}{ital d}} ({var epsilon} is the energy difference between the Cu 3{ital d} and O 2{ital p} levels and {ital U}{sub {ital p}{ital d}} is the Coulomb repulsion between two holes occupying adjacent Cu and O sites) are 1.8 and 0.9 eV, respectively, with an uncertainty of {plus minus}0.5 eV.
OSTI ID:
5945189
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:1; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English