Spontaneous emission factor and waveguiding in GaAs/AlGaAs MQW lasers

Journal Article · Thu Jun 01 04:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29282· OSTI ID:5940610

Hausser, S; Pilkuhn, M H; Idler, W; zielinski, E; Weimann, G; Schlapp, W

The waveguiding properties of gain-guided GaAs MQW lasers are investigated. Near- and far-field measurements reveal that gain guiding is much stronger in the MQW lasers than in conventional DH lasers. The index anti-guiding, however, is of the same strength in both types of lasers. Due to the altered lateral waveguiding, the astigmatism factor /Kappa/ is very low in the MQW lasers and has a value /Kappa/ = 3. As a consequence, MQW lasers exhibit very narrow far fields, nearly single longitudinal mode operation with a sidemode suppression ratio of 1/10, and a low linewidth enhancement factor /alpha/ = 2.

• Research Organization: Physikalisches Institut, Univ. Stuttgart, D-7000 Stuttgart 80 (DE); SEL Research Centre, D-7000 Stuttgart 40 (DE); Walter Schottky Institut, Technical Univ. of Muenchen, D-8046 Garching (DE); Forschungsinstitut der Deutschen Bundespost, D-6100 Darmstadt (DE)
• OSTI ID: 5940610
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
EMISSION
ENERGY-LEVEL TRANSITIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LINE WIDTHS
PNICTIDES
QUANTUM ELECTRONICS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
WAVEGUIDES