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Title: Injection control of a long-pulse electron-beam pumped XeF( C r arrow ital A ) laser

Journal Article · · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)
DOI:https://doi.org/10.1109/3.62116· OSTI ID:5937182
;  [1]
  1. Anco Research Lab., Inc., Everett, MA (US)

An XeF(C {r arrow} A) laser, pumped at a rate of 290 kW/cm{sup 3} with a 600 ns electron-beam pulse, has been operated as an injection-controlled oscillator. A stable cavity has been injected with radiation from a pulsed dye laser source. A significant reduction in laser turn-on time has been achieved, and the laser pulse duration has been extended to 500 ns (FWHM). As a consequence, the laser intrinsic efficiency and specific output energy have been increased by approximately 50%, to 1.8% and 3 J/L, respectively, which represent the best performance obtained thus far for any directly electrically-excited XeF(C {r arrow} A) laser. Also, by injecting a narrowband signal into the cavity, the XeF(C {r arrow} A) laser linewidth has been reduced by more than two orders of magnitude, to less than 1.3 {Angstrom}, the resolution of the spectrometer. The laser wavelength has been tuned from 478.6 to 486.8 nm, with less than a factor of two variation in output energy.

OSTI ID:
5937182
Journal Information:
IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Vol. 26:11; ISSN 0018-9197
Country of Publication:
United States
Language:
English

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