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Title: Heating of photoexcited electron-hole plasma in II--VI compounds

Journal Article · · Sov. Phys. - JETP (Engl. Transl.); (United States)
OSTI ID:5935775

We investigate the heating of a nonequilibrium electron-hole plasma (EHP) that emits in the spectral region h..nu..>E/sub g/, in the crystals ZnTe, ZnSe, ZnS, CdTe, CdSe, and CdS in the case of high-power surface photoexcitation (T = 77 K). It is observed that with increasing excitation level the effective temperature of the nonequilibrium carriers saturates. A quantitative analysis of the power balance equation with allowance for the electron (hole)-phonon, electron-electron (hole), and electron-plasmon interactions, as well as the appearance of a characteristic anisotropic photoheating of the EHP in oriented CdSe and CdS crystals leads to the conclusion that at excitation densities on the order of 10/sup 24/ cm/sup -2/xsec/sup -1/ the hot EHP is localized at the depth of penetration of the exciting light into the crystal.

OSTI ID:
5935775
Journal Information:
Sov. Phys. - JETP (Engl. Transl.); (United States), Vol. 56:3
Country of Publication:
United States
Language:
English