SEU and latchup tolerant advanced CMOS technology

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5933520

Koga, R; Crawford, K B; Hansel, S J; Johnson, B M; Lau, D D; Penzin, S H; Pinkerton, S D ^[1]; Mahen, M C ^[2]

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1. Aerospace Corp., Los Angeles, CA (USA). Space Sciences Lab.
2. National Semiconductor, South Portland, ME (US)

Selected microcircuits were tested for heavy ion induced single event upset (SEU) and latchup. The devices showed no signs of heavy ion induced latchup for LET values up to 120 MeV/(mg/cm{sup 2}). SEU LET thresholds varied within a rather narrow range of 40 to 60 MeV/(mg/cm{sup 2}). The test results suggest that FACT devices will exhibit higher tolerances to the cosmic ray environment than functionally similar microcircuits fabricated in HC/HCT, ALS, or LS technologies.

• OSTI ID: 5933520
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
COSMIC RADIATION
ELECTRONIC CIRCUITS
FABRICATION
HEAVY IONS
IONIZING RADIATIONS
IONS
MICROELECTRONIC CIRCUITS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
TESTING
TOLERANCE