Influence of free carrier plasma effect on carrier-induced refractive index change for quantum-well lasers

Journal Article · Fri Jan 01 00:00:00 EST 1993 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.185046· OSTI ID:5927452

Murata, S; Tomita, A; Suzuki, A ^[1]

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1. NEC Corp., Tsukuba (Japan)

Influence of the free carrier component due to the plasma effect on carrier-induced refractive index change and its dependency on polarization for multiple-quantum-well (MQW) and bulk lasers are experimentally studied. The ratios of the component to the total index change, R[sub fc], are 0.6, 0.4, and 0.1 for the 1.3-[mu]m MQW, 1.3-[mu]m bulk, and 0.8-[mu]m MQW lasers, respectively. The TM/TE polarization ratios of the component, R[sub TM/TE], are 0.8 and 0.3 for 1.3-[mu]m MQW and 0.8-[mu]m MQW lasers. The relationship between the index change and the carrier overflow (to barrier and separate confinement heterostructure layers) for MQW lasers is also discussed. Large R[sub fc] and R[sub TM/TE] for the 1.3-[mu]m MQW laser result from the carrier overflow.

• OSTI ID: 5927452
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 5:1; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
REFRACTIVE INDEX
CHARGE CARRIERS
EXPERIMENTAL DATA
OSCILLATION MODES
POLARIZATION
DATA
INFORMATION
LASERS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)