Low-loss lumped-element capacitors for superconductive integrated circuits

Conference · Tue Feb 28 23:00:00 EST 1989 · IEEE Trans. Magn.; (United States)

OSTI ID:5920074

Bhushan, M; Green, J B; Anderson, A C

Low-loss lumped-element capacitors for superconductive circuits were fabricated using sputter-deposited Nb electrodes. The dielectric layer was formed by partially anodizing the Nb base electrode. The deposition technique for the counterelectrode strongly affected the parasitic shunt conductance of the capacitors. It was found that this conductance could be reduced by depositing the Nb counterelectrode films by dc magnetron sputtering at a low rate and at a high Ar pressure. By optimizing these process parameters, capacitors with breakdown voltages greater than 85% of the anodic oxide formation voltage and loss-tangents less than 0.003 at 10 MHz were fabricated. These capacitors were integrated with Nb thin-film inductors to produce L-C resonators with quality factors greater than 400.

• Research Organization: Lincoln Lab., MIT, Lexington, MA (US)
• OSTI ID: 5920074
• Report Number(s): CONF-880812-
• Journal Information: IEEE Trans. Magn.; (United States), Journal Name: IEEE Trans. Magn.; (United States) Vol. 25:2; ISSN IEMGA
• Country of Publication: United States
• Language: English

Related Subjects

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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON
CAPACITORS
DIELECTRIC PROPERTIES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRODES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
FLUIDS
GASES
HIGH PRESSURE
INTEGRATED CIRCUITS
METALS
MICROELECTRONIC CIRCUITS
NIOBIUM
NONMETALS
OPTIMIZATION
PHYSICAL PROPERTIES
RARE GASES
RESONATORS
SPUTTERING
SUPERCONDUCTING DEVICES
THIN FILMS
TRANSITION ELEMENTS