X-ray measurements of lattice parameter changes in electron irradiated silicon
Thesis/Dissertation
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OSTI ID:5912154
In this work a double-source, double-crystal x-ray spectrometer and a double-crystal x-ray topograph were constructed and refined. The spectrometer can compare the lattice parameters of two highly perfect silicon crystals to an accuracy of 2 parts per billion. Silicon samples doped with various concentrations of boron or arsenic were irradiated with 1-MeV electrons. It was found that the lattice parameters of boron-doped crystals were smaller than the lattice parameter of a pure silicon crystal. Irradiation caused an increase in the lattice parameter initially proportional to the electron fluence. As irradiation continued, the lattice dilation stopped before the parameter reached that of pure silicon. The difference between the final and original lattice parameters in the boron-doped samples was found to be proportional to the impurity concentration. An arsenic-doped sample was also irradiated and showed similar expansion to a saturated state. The increase in crystal volume was found to be 0.02 atomic volumes per arsenic atom, but this value has a large uncertainty due to the unusually large change in the lattice parameter at saturation. Two high-perfection samples, undoped, with resistivities in excess of 1500 ohm.cm were also irradiated. Lattice parameters of these samples showed no change to within several parts per billion after irradiation to a fluence of 4 x 10/sup 18/ electrons/cm/sup 2/.
- Research Organization:
- Purdue Univ., Lafayette, IN (USA)
- OSTI ID:
- 5912154
- Country of Publication:
- United States
- Language:
- English
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Mon Aug 15 00:00:00 EDT 1988
· J. Appl. Phys.; (United States)
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OSTI ID:6952149