Mechanism and kinetics of silane decomposition in shock waves

Journal Article · Sun Feb 01 04:00:00 EST 1987 · Kinet. Catal. (Engl. Transl.); (United States)

OSTI ID:5896271

Votintsev, V N; Zaslonko, I S; Mikheev, V S; Smirnov, V N

The authors have made atomic absorption and chemiluminescence measurements on the kinetics of silane decomposition after shock waves in the 1400-1800 K region with mixtures containing 0.0004-0.001% SiH/sub 4/ in Ar with additions of 0-5% N/sub 2/O. The authors have established that decomposition of SiH4 leads to formation of Si atoms and proceeds by successive elimination of H/sub 2/. The authors have measured the decomposition rate constants for SiH/sub 4/ and SiH/sub 2/. From comparison of experimental data with calculations using RRKM theory, the authors have obtained the values for the energy barriers (E1 = 270, E/sub 2/ = 165 kJ/mole), on the basis of which the authors have the strength of the H/sub 2/Si-H and HSi-H bonds.

• Research Organization: Institute of Chemical Physics, Moscow, USSR
• OSTI ID: 5896271
• Journal Information: Kinet. Catal. (Engl. Transl.); (United States), Journal Name: Kinet. Catal. (Engl. Transl.); (United States) Vol. 27:4; ISSN KICAA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
ABSORPTION SPECTRA
ARGON
BINDING ENERGY
CHEMICAL BONDS
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CHEMILUMINESCENCE
DECOMPOSITION
DEPOSITION
ELEMENTS
ENERGY
EPITAXY
FLUIDS
GASES
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
KINETICS
LUMINESCENCE
MATHEMATICAL MODELS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PYROLYSIS
RARE GASES
REACTION KINETICS
SEMIMETALS
SHOCK WAVES
SILANES
SILICON
SILICON COMPOUNDS
SPECTRA
SURFACE COATING
TEMPERATURE DEPENDENCE
THERMOCHEMICAL PROCESSES
VAPOR PHASE EPITAXY
VERY HIGH TEMPERATURE