Heat treatment effects in neutron transmutation doped silicon

Conference · Thu Oct 01 04:00:00 EDT 1981

OSTI ID:5890030

Cleland, J W

It is shown by electrical property measurements that a significant concentration (10/sup 14/-10/sup 15/ cm/sup -3/) of an impurity (presumably Li) which can be activated by heat treatment at greater than or equal to 650/sup 0/C is present in commercially available float zone (FZ) refined, Czochralski (Cz)-grown or neutron transmutation doped (NTD) Si. Most (90%) of these donors become inactive in FZ or Cz Si after heat treatment within a few days at ambient temperature, but many (40 to 70%) of them are still active as donors after several months in polycrystalline (PX) or NTD Si that contains lattice defects or radiation damage. Virtually all of these donors can be reactivated by a subsequent heat treatment at greater than or equal to 650/sup 0/C. These results are especially significant because heat treatment is required to remove oxygen-related donors formed in Cz Si during cooldown after growth or to remove radiation damage and obtain the anticipated carrier concentration in NTD FZ or Cz Si. Heat treatment for 20h at 900/sup 0/C is not sufficient to remove all of the Li-lattice defect donor complexes in NTD Si.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5890030
• Report Number(s): CONF-811145-4; ON: DE82003998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
360605 -- Materials-- Radiation Effects
ALKALI METALS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
HEAT TREATMENTS
IMPURITIES
ION IMPLANTATION
LITHIUM
MATERIALS
METALS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON