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Effects of junction resistance and counterelectrode material on point-contact tunneling into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/

Journal Article · · J. Low Temp. Phys.; (United States)
DOI:https://doi.org/10.1007/BF00116870· OSTI ID:5889270

The effects of junction resistance and counterelectrode material on the results of point-contact tunneling studies into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/ are illustrated. Although reasonably symmetric I(V) curves predominantly indicate energy gap values /Delta/ /approx/ 20 meV, large asymmetries are often found for high-resistance junctions. Very low-resistance junctions show the expected behavior of pure metallic bridge and indicate /Delta/ /approx/ 25-30 meV.

Research Organization:
Argonne National Lab., IL (USA)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5889270
Journal Information:
J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 71:5-6; ISSN JLTPA
Country of Publication:
United States
Language:
English

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