A temperature dependent SPICE macro-model for power MOSFETs

Conference · Tue Aug 06 00:00:00 EDT 2002 · [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems

DOI:https://doi.org/10.1109/mwscas.1991.252091· OSTI ID:5884559

Pierce, Donald G. ^[1]

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1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

The power MOSFET SPICE Macro-Model has been developed suitable for use over the temperature range -55 to 125 °C. The model is comprised of a single parameter set with temperature dependence accessed through the SPICE .TEMP card. SPICE parameter extraction techniques for the model and model predictive accuracy are discussed.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5884559
• Report Number(s): SAND--91-0422C; CONF-9105169--1; ON: DE91011737; ISBN: 0-7803-0620-1
• Journal Information: [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, Journal Name: [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CAPACITANCE
COMPUTERIZED SIMULATION
CURRENTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
FIELD EFFECT TRANSISTORS
MATHEMATICAL MODELS
MOS TRANSISTORS
MOSFET
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SIMULATION
TEMPERATURE DEPENDENCE
TRANSISTORS