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Unusual behavior of the magnetoresistance of boron carbonitride films at low temperature

Journal Article · · Journal of Materials Research
 [1];  [2]; ;  [1];  [3];  [4]
  1. CNRS-Centre de Recherche Paul Pascal, Universite Bordeaux I, avenue du Dr Schweitzer, 33600 Pessac (France)
  2. Laboratoire de Physico-Chimie et de Physique des Materiaux, Departement des Sciences des Materiaux et des Procedes, Universite Catholique de Louvain, Place Croix du Sud, 1 B-1348 Louvain-la-Neuve, (Belgium)
  3. CNRS-Universite Paul Sabatier-INSA, Service National des Champs Magnetiques Pulses, Complexe Scientifique de Rangueil, 31077 Toulouse (France)
  4. Laboratoire de Physico-Chimie et de Physique des Materiaux, Departement des Sciences des Materiaux et des Procedes, Universite Catholique de Louvain, Place Croix du Sud, 1 B-1348 Louvain-la-Neuve, (Belgique)
We have performed resistivity, and magnetoresistance measurements down to 0.3 K, and under fields up to 37 T of boron carbonitride and BC{sub 3} films prepared by chemical vapor deposition. The turbostratic structure of the as-deposited materials favors a 2D weak localization effect which is invoked to explain the negative magnetoresistance (MR) as well as the log T variation of the resistivity. However, at very low temperature a positive component is superimposed on the negative MR. At high fields, the total MR is positive and almost isotropic. Usual theories are unable to account for the observed phenomenon. Increasing heat-treatments up to 1800{degree}C increases the 2D character of the deposits, which show an increasingly negative magnetoresistance. For still higher treatments, the change of the films to a 3D graphitic-like structure leads to a vanishing of the negative magnetoresistance. {copyright} {ital 1997 Materials Research Society.}
OSTI ID:
587211
Journal Information:
Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 7 Vol. 12; ISSN JMREEE; ISSN 0884-2914
Country of Publication:
United States
Language:
English