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Title: Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly technical progress report No. 1, September 29-December 31, 1978

Technical Report ·
OSTI ID:5868225

A vacuum deposition technique for forming polycrystalline silicon solar cells is being explored. Transition metal diboride layers, being examined as the cell's bottom electrode, were deposited on single crystal (sapphire) and polycrystalline (alumina) Al/sub 2/O/sub 3/ substrates. Graphite substrates were also examined. Boron doped p-type silicon layers were formed by co-deposition in the vacuum at substrate temperature between 1100/sup 0/C and 1200/sup 0/C. Silicon grain size in the films was between 4 ..mu..m and 6 ..mu..m depending on the deposition conditions (supersaturation ratio). The n-type silicon layer was formed by gaseous diffusion into the p-type layer. Detailed secondary-ion mass spectra analysis of silicon, metal borides and substrates was carried out. The most satisfactory devices used TiB/sub 2/ electrodes on alumina substrates. Solar cell AM 2 efficiencies of 1.8% were about the same as the planar cells formed previously by double-diffusion.

Research Organization:
Johns Hopkins Univ., Laurel, MD (USA). Applied Physics Lab.
DOE Contract Number:
ET-78-A-03-2208
OSTI ID:
5868225
Report Number(s):
SAN-2208-T1
Country of Publication:
United States
Language:
English