Investigations of the growth of TiN thin films from Ti(NMe[sub 2])[sub 4] and ammonia

Journal Article · Wed Sep 01 04:00:00 EDT 1993 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2220889· OSTI ID:5857027

Prybyla, J A; Chiang, C M; Dubois, L H ^[1]

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1. AT and T Bell Lab., Murray Hill, NJ (United States)

Growth of clean (<5% carbon), stoichiometric (Ti:N = 1.15 [+-] 0.1) titanium nitride thin films on Si(100) substrate from the reaction of tetrakisdimethylamido titanium, Ti(NMe[sub 2])[sub 4], and ammonia is reported. Films were deposited using a novel gas delivery system which allowed the reactants to be mixed at elevated pressures with the substrate held in high vacuum. The films were analyzed using Rutherford backscattering and Auger electron spectroscopy while the gas-phase chemistry was monitored by mass spectrometry. The quality of the films was measured as a function of gas pressure, reactant ratio, and substrate temperature. Growth on patterned wafers gave information on reactant sticking coefficients and surface mobilities. The reaction of Ti(NMe[sub 2])[sub 4] with [sup 15]NH[sub 3] or ND[sub 3] clearly showed that both the nitrogen in a clean TiN film and the hydrogen (deuterium) in the gaseous dimethylamine product are derived exclusively from the ammonia. Mass spectrometry studies indicate that the reactive intermediate may be a high molecular weight oligomer consisting of Ti, N, H, and perhaps C. These finding are discussed both in terms of their impact on understanding the growth mechanism, as well as on the potential of this precursor system to be used in a manufacturing process.

• OSTI ID: 5857027
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:9; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
&amp; Refractories-- Preparation &amp; Fabrication
AMMONIA
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
COATINGS
DATA
DEPOSITION
ELEMENTS
EXPERIMENTAL DATA
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
ISOTOPE APPLICATIONS
KINETICS
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
REACTION INTERMEDIATES
REACTION KINETICS
SEMIMETALS
SILICON
SURFACE COATING
TITANIUM COMPOUNDS
TITANIUM NITRIDES
TRACER TECHNIQUES
TRANSITION ELEMENT COMPOUNDS
VAPOR DEPOSITED COATINGS