Tunneling measurement of the electron inelastic-scattering rate in a strongly disordered superconductor

Journal Article · Fri Feb 01 04:00:00 EST 1991 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.43.3732· OSTI ID:5854175

Pyun, D S; Lemberger, T R ^[1]

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1. Department of Physics, Ohio State University, Columbus, Ohio 43210 (US)

Tunneling measurements show that the inelastic-scattering rate for single-electron excitations in strongly disordered superconducting indium oxide films at {ital T}{much lt}{ital T}{sub {ital c}0} is approximately proportional to {ital T}{sup 3}, rather than to exp({minus}{Delta}/{ital k}{sub {ital B}T}) as expected for electron-electron scattering. A recent theory indicates that electron-phonon scattering may be the explanation.

• OSTI ID: 5854175
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:4; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
656100 -- Condensed Matter Physics-- Superconductivity
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
INDIUM COMPOUNDS
INDIUM OXIDES
INELASTIC SCATTERING
JUNCTIONS
LIFETIME
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SCATTERING
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
TEMPERATURE DEPENDENCE
TUNNEL EFFECT