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Novel tunneling technique for measuring electron scattering rates in superconductors: Application to Sn and Sn-In films

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
The low-voltage resistances R/sub j/(T,I/sub s/) of low-resistance SnSn-oxideCu and Sn/sub 0.95/In/sub 0.05/Sn-In--oxideCu tunnel junctions were measured as functions of temperature and supercurrent along the Sn or Sn-In film. From precise numerical fits to a recent theory, we determined the electron-phonon scattering rate at T/sub c/ for both Sn and Sn-In to be tau/sub e//sub -ph/(T/sub c/)/sup -1/approx. =2.8 x 10/sup 9/s/sup -1/ +- 10%, with the assumption of an electron-phonon coupling ..cap alpha../sup 2/F(..omega..)proportional..omega../sup 2/. We determined that the crystalline anisotropy of the order parameter ..delta.. was proportional to electron mean free path squared, as expected theoretically. Extrapolation to infinite mean free path gave a value for the mean-square anisotropy in ..delta.. in pure Sn of /sub 0/ = 0.0053 +- 13%. The consistency of these results from sample to sample, and the agreement between all of these results and published theoretical and experimental work, verifies the theory and demonstrates the feasibility of using such measurements to study electron scattering in novel superconducting materials
Research Organization:
Department of Physics, Ohio State University, Columbus, Ohio 43210
OSTI ID:
5289278
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 37:7; ISSN PRBMD
Country of Publication:
United States
Language:
English