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Title: Fabrication of Nb-NbO/sub x/-Pb Josephson tunnel junctions using rf glow-discharge oxidation

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.325865· OSTI ID:5853754

An rf glow-discharge oxidation technique has been applied to the fabrication of Nb-NbO/sub x/-Pb Josephson tunnel junctions which exhibit quasiparticle current densities up to 10/sup 4/ A/cm/sup 2/ at the sum of the gaps (i.e., junction resistances as low as 10/sup -7/ ..cap omega.. cm/sup 2/). The dependence of the impedance level and the shape of the junction V-I curve on the oxidation parameters (e.g., oxidation time, rf bias voltage, the composition, and the pressure of the argon-oxygen mixture) have been investigated. Good junctions were obtained by using very low rf peak-to-peak voltage (approx. =60 V) and an oxidation period of 10 min or less. The junction resistance can be controlled by varying the partial pressure of oxygen (less than 3 x 10/sup -4/ Torr) while using a partial pressure of argon high enough (approx. =10/sup -2/ Torr) to sustain a steady rf glow discharge. The results also indicate that sputter removal of niobium oxide is virtually absent in this rf glow-discharge oxidation process. The dependence of the junction resistance on the glow-discharge parameters is qualitatively explained by considering the effects of the parameters on the concentration of the oxidizing species in the vicinity of the substrate.

Research Organization:
University of Wisconsin, Madison, Wisconsin 53706
OSTI ID:
5853754
Journal Information:
J. Appl. Phys.; (United States), Vol. 50:11
Country of Publication:
United States
Language:
English